NXP PBSS4120T 单晶体管 双极, NPN, 20 V, 300 mW, 1 A, 470 hFE
The is a 1A NPN breakthrough-in small signal BISS Transistor in a plastic package provides ultra-low VCEsat and RCEsat parameters. It is suitable for use with the peripheral driver in low supply voltage applications and inductive load drivers.