PTFB183404EV1R0XTMA1

射频金属氧化物半导体场效应RF MOSFET晶体管

Summary of Features:

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Broadband input and output matching

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Wide video bandwidth

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Typical single-carrier WCDMA performance at 1880 MHz, 30 V

\- Output power = 125 W

\- Efficiency = 31%

\- Gain = 17 dB,PAR = 5.5 dB @ 0.01% CCDF probability

\- ACPR @ 5 MHz= -37 dBc

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Increased negative gate-source voltage range for improved performance in Doherty amplifiers

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Capable of handling 10:1 VSWR @ 30 V, 340 W CW output power

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Integrated ESD protection

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Excellent thermal stability  

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Pb-free and RoHS compliant

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Package: H-36275-8, bolt-down