2N6299

PNP达林顿功率硅晶体管 PNP DARLINGTON POWER SILICON TRANSISTOR

This high speed PNP transistor is rated at 8 amps and is military qualified up to a JANTXV level.  This TO-213AA isolated package features a 180 degree lead orientation.

艾睿:
Microsemi brings you their latest PNP 2N6299 Darlington transistor, a component that can easily provide you with much higher current gain values. This Darlington transistor array&s;s maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 4@80mA@8A V. This product&s;s maximum continuous DC collector current is 8 A, while its minimum DC current gain is 500@1A@3 V|750@4A@3V|100@8A@3V. It has a maximum collector emitter saturation voltage of 2@16mA@4A|3@80mA@8A V. Its maximum power dissipation is 75000 mW. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 175 °C.

TME:
Transistor: PNP; bipolar; 80V; 8A; 32W; TO66

Verical:
Trans Darlington PNP 80V 8A 64000mW 3-Pin2+Tab TO-66 Tray