BC858CLT1G

ON SEMICONDUCTOR  BC858CLT1G  单晶体管 双极, 通用, PNP, -30 V, 100 MHz, 225 mW, -100 mA, 100 hFE

是一款NPN通用双极, 设计用于线性和开关应用。该器件设计用于低功耗表面安装应用。

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符合AEC-Q101标准, PPAP功能

得捷:
TRANS PNP 30V 0.1A SOT23-3

欧时:
ON Semiconductor, BC858CLT1G

立创商城:
PNP 双极晶体管

艾睿:
Design various electronic circuits with this versatile PNP BC858CLT1G GP BJT from ON Semiconductor. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 5 V.

Allied Electronics:
ON Semi BC858CLT1G PNP Bipolar Transistor; 0.1 A; 30 V; 3-Pin SOT-23

Jameco:
Trans General Purpose BJT PNP 30 Volt 0.1A 3-Pin SOT-23

安富利:
Trans GP BJT PNP 30V 0.1A 3-Pin SOT-23 T/R

Chip1Stop:
Trans GP BJT PNP 30V 0.1A 300mW Automotive 3-Pin SOT-23 T/R

TME:
Transistor: PNP; bipolar; 30V; 0.1A; 250mW; SOT23

Verical:
Trans GP BJT PNP 30V 0.1A Automotive 3-Pin SOT-23 T/R

Newark:
# ON SEMICONDUCTOR  BC858CLT1G  Bipolar BJT Single Transistor, General Purpose, PNP, -30 V, 100 MHz, 225 mW, -100 mA, 420 hFE

DeviceMart:
TRANS PNP LP 100MA 30V SOT23

Win Source:
TRANS PNP 30V 0.1A SOT23