VSMF4710-GS08

VISHAY  VSMF4710-GS08  红外发射器, 高速, 120 °, LCC, 100 mA, 1.5 V, 15 ns, 15 ns

The is a 870nm Infrared Emitting Diode in GaAlAs double hetero DH technology. It is moulded in a PLCC-2 package for surface mounting SMD.

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High speed

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High reliability

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High radiant power

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High radiant intensity

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ϕ = ±60° Angle of half sensitivity

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Low forward voltage

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Suitable for high pulse current operation

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Good spectral matching with Si photodetectors

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24MHz High modulation bandwidth fc