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FDN308P概述

FAIRCHILD SEMICONDUCTOR FDN308P 晶体管, MOSFET, P沟道, -1.5 A, -20 V, 125 mohm, -4.5 V, -1 V

The is a 2.5V specified P-channel MOSFET uses a rugged gate version of "s advanced PowerTrench® process. It has been optimized for power management and load switch applications with a wide range of gate drive voltage 2.5 to 12V. The SuperSOT™-3 provides low RDS ON and 30% higher power handling capability than SOT23 in the same footprint.