Trans IGBT Chip N-CH 600V 48A 300000mW 3Pin3+Tab TO-247
IGBT PT 600 V 300 W 通孔 TO-247AD
得捷:
IGBT 600V 300W TO247
艾睿:
Minimize the current at your gate with the IXGH48N60B3D1 IGBT transistor from Ixys Corporation. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 300000 mW. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
Verical:
Trans IGBT Chip N-CH 600V 48A 300000mW 3-Pin3+Tab TO-247
Win Source:
IGBT 600V 300W TO247
| 型号 | 品牌 | 下载 |
|---|---|---|
| IXGH48N60B3D1 | IXYS Semiconductor | 下载 |
| IXGH10N100AU1 | IXYS Semiconductor | 下载 |
| IXGH24N60B | IXYS Semiconductor | 下载 |
| IXGH30N60BD1 | IXYS Semiconductor | 下载 |
| IXGH24N60C | IXYS Semiconductor | 下载 |
| IXGH32N60C | IXYS Semiconductor | 下载 |
| IXGH32N60CD1 | IXYS Semiconductor | 下载 |
| IXGH50N60B | IXYS Semiconductor | 下载 |
| IXGH32N60B | IXYS Semiconductor | 下载 |
| IXGH24N60A | IXYS Semiconductor | 下载 |
| IXGH32N60BU1 | IXYS Semiconductor | 下载 |