硅PNP功率晶体管 Silicon PNP Power Transistors
Design various electronic circuits with this versatile PNP GP BJT from . This bipolar junction transistor"s maximum emitter base voltage is 4 V. Its maximum power dissipation is 1000 mW. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 4 V.
| 型号 | 品牌 | 下载 |
|---|---|---|
| JAN2N3868 | Microsemi 美高森美 | 下载 |
| JAN2N3019 | Microsemi 美高森美 | 下载 |
| JAN2N2329 | Microsemi 美高森美 | 下载 |
| JAN2N2222A | ON Semiconductor 安森美 | 下载 |
| JAN2N2907A | Microsemi 美高森美 | 下载 |
| JAN2N2904A | Microsemi 美高森美 | 下载 |
| JAN2N2219A | Microsemi 美高森美 | 下载 |
| JAN2N3501 | Microsemi 美高森美 | 下载 |
| JAN2N3700 | Microsemi 美高森美 | 下载 |
| JAN2N2905A | ON Semiconductor 安森美 | 下载 |
| JAN2N2906A | Microsemi 美高森美 | 下载 |