FCH47N60F_F133

FAIRCHILD SEMICONDUCTOR  FCH47N60F_F133  功率场效应管, MOSFET, N沟道, 47 A, 600 V, 0.062 ohm, 10 V, 3 V

The is a N-channel SuperFET® FRFET® high voltage super-junction MOSFET utilizes charge balance technology for outstanding low ON-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dV/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET FRFET® MOSFET"s optimized body diode reverse recovery performance can remove additional component and improve system reliability.

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Fast recovery type trr = 240ns

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Ultra low gate charge Qg = 210nC

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Low effective output capacitance Coss.eff = 420pF

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100% avalanche tested