BSC093N04LSGATMA1

Infineon OptiMOS 3 系列 Si N沟道 MOSFET BSC093N04LSGATMA1, 49 A, Vds=40 V, 8引脚 TDSON封装

I OptiMOS™3 功率 MOSFET，高达 40V

OptiMOS™产品提供高效能封装，以解决最具挑战性的应用，在有限空间内提供完全的灵活性。 这些 Infineon 产品经的设计符合并超过计算机应用中更严格的下一代电压调节标准的能效和功率密度要求。

快速切换 MOSFET，用于 SMPS

优化技术，用于直流/直流转换器

符合目标应用的 JEDEC1 规格

N 通道，逻辑电平

极佳的栅极电荷 x R DSon 产品 FOM

极低导通电阻 R DSon

无铅电镀

欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET BSC093N04LSGATMA1, 49 A, Vds=40 V, 8引脚 TDSON封装

得捷:
MOSFET N-CH 40V 13A/49A TDSON

艾睿:
Use Infineon Technologies&s; BSC093N04LSGATMA1 power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 2500 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This device is made with optimos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET N-CH 40V 13A 8-Pin TDSON EP

Chip1Stop:
Trans MOSFET N-CH 40V 13A 8-Pin TDSON EP T/R

TME:
Transistor: N-MOSFET; unipolar; 40V; 40A; 35W; PG-TDSON-8

Verical:
Trans MOSFET N-CH 40V 13A 8-Pin TDSON EP T/R

Newark:
# INFINEON  BSC093N04LSGATMA1  MOSFET Transistor, N Channel, 49 A, 40 V, 7.8 mohm, 10 V, 1.2 V

罗切斯特:
Trans MOSFET N-CH 40V 13A 8-Pin TDSON EP

Win Source:
MOSFET N-CH 40V 49A TDSON-8