IRFL110TRPBF

VISHAY  IRFL110TRPBF  晶体管, MOSFET, N沟道, 1.5 A, 100 V, 540 mohm, 10 V

The is a HEXFET® third generation N-channel Power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heat sinking. Power dissipation of greater than 1.25W is possible in a typical surface-mount application.

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Dynamic dV/dt rating

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Repetitive avalanche rating

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Fast switching

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Ease of paralleling

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Simple drive requirements