射频放大器 SiGe:C Low Noise Amplifier MMIC with bypass switch for LTE
Overview
The BGS8M2UK is a Low Noise Amplifier LNA with bypass switch for LTE receiver applications, available in a Wafer-Level Chip-Scale Package WLCSP. This product is only to be used in an overmolded module.
The BGS8M2UK delivers system-optimized gain for both primary and diversity applications where sensitivity improvement is required. The high linearity of this low noise device ensures the required receive sensitivity independent of cellular transmit power level in Frequency Division Duplex FDD systems. When receive signal strength is sufficient, the BGS8M2UK can be switched off to operate in bypass mode at a 1 A current, to lower power consumption. The BGS8M2UK requires only one external matching inductor.
The BGS8M2UK is optimized for 1805 MHz to 2200 MHz.
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## Features
* Operating frequency from 1805 MHz to 2200 MHz
* Noise figure NF = 0.75 dB
* Gain 15.4 dB
* High input 1 dB compression point of -3.5 dBm
* Bypass switch insertion loss of -1.9 dB
* High in band IP3i of 2.5 dBm
* Supply voltage 1.5 V to 3.1 V
* Integrated supply decoupling capacitor
* Optimized performance at a supply current of 5.8 mA
* Bypass mode current consumption < 1 µA
* Integrated temperature stabilized bias for easy design
* Requires only one input matching inductor
* Input and output AC coupled
* ESD protection on all pins HBM > 2 kV
* Integrated matching for the output
* Available in a WLCSP 0.69 mm x 0.44 mm x 0.2 mm: SOT1445-1
* 180 GHz transit frequency - SiGe:C technology
* Moisture sensitivity level of 1
## Features