NPN达林顿功率硅晶体管 NPN DARLINGTON POWER SILICON TRANSISTOR
The NPN Darlington transistor from is the perfect solution when amplified current gain values are needed. This Darlington transistor array"s maximum emitter base voltage is 12 V. This product"s maximum continuous DC collector current is 5 A, while its minimum DC current gain is 2000@1A@5 V|2000@5A@5V|400@10A@5V. It has a maximum collector emitter saturation voltage of 1.5@5mA@5A V. Its maximum power dissipation is 1000 mW. This Darlington transistor array has an operating temperature range of -65 °C to 200 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 12 V.
| 型号 | 品牌 | 下载 |
|---|---|---|
| 2N6350 | Microsemi 美高森美 | 下载 |
| 2N6388G | ON Semiconductor 安森美 | 下载 |
| 2N6348AG | ON Semiconductor 安森美 | 下载 |
| 2N6394G | ON Semiconductor 安森美 | 下载 |
| 2N6395G | ON Semiconductor 安森美 | 下载 |
| 2N6399TG | ON Semiconductor 安森美 | 下载 |
| 2N6397TG | ON Semiconductor 安森美 | 下载 |
| 2N6397G | ON Semiconductor 安森美 | 下载 |
| 2N6399G | ON Semiconductor 安森美 | 下载 |
| 2N6394 | ON Semiconductor 安森美 | 下载 |
| 2N6388 | ST Microelectronics 意法半导体 | 下载 |