Trans RF BJT NPN 4.5V 0.035A 4Pin Micro-X
Summary of Features:
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HiRel Discrete and Microwave Semiconductor
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For High Gain Low Noise Amplifiers
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For Oscillators up to 10 GHz
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Noise Figure F = 1.1 dB at 1.8 GHz
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Outstanding Gms = 21dB at 1.8 GHz
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Hermetically sealed microwave package
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Transition Frequency fT = 22 GHz
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SIEGET® 25-Line
Technologies Grounded Emitter Transistor-25 GHz fT-Line
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Type Variant No. 02
Target Applications:
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Quality level for Engineering Models