射频功率MOSFET晶体管200W ， 2-175MHz ， 28V RF Power MOSFET Transistor 200W, 2-175MHz, 28V
Features
• N-Channel enhancement mode device
• DMOS structure
• Lower capacitances for broadband operation
• High saturated output power
• Lower noise figure than bipolar devices
贸泽:
RF MOSFET Transistors
Verical:
Trans RF MOSFET N-CH 65V 20A 5-Pin