BC847BE6433HTMA1

Infineon BC847BE6433HTMA1 , NPN 双极晶体管, 100 mA, Vce=50 V, HFE:420, 250 MHz, 3引脚 SOT-23封装

小信号 NPN ，

得捷:
TRANS NPN 45V 0.1A SOT-23

欧时:
Infineon BC847BE6433HTMA1 , NPN 双极晶体管, 100 mA, Vce=50 V, HFE:420, 250 MHz, 3引脚 SOT-23封装

艾睿:
This NPN BC847BE6433HTMA1 general purpose bipolar junction transistor from Infineon Technologies is perfect for a circuit requiring high-current density and can operate in a high voltage range. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 330 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.

Chip1Stop:
Trans GP BJT NPN 45V 0.1A Automotive 3-Pin SOT-23 T/R

Verical:
Trans GP BJT NPN 45V 0.1A 330mW Automotive 3-Pin SOT-23 T/R