双N和P沟道PowerTrench MOSFET Dual N & P-Channel PowerTrench MOSFET
General Description
These dual N- and P-Channel enhancement mode power field effect transistors are produced using Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
Features
· Q1: N-Channel
5.5A, 40V RDSon = 39mW @ VGS = 10V
RDSon = 57mW @ VGS = 7V
· Q2: P-Channel
–4.4A, –40V RDSon = 46mW @ VGS = –10V
RDSon = 63mW @ VGS = –4.5V
· High power and handling capability in a widely used surface mount package
Application
· Motor Control
· DC/DC conversion
| 型号 | 品牌 | 下载 |
|---|---|---|
| FDS4895C | Fairchild 飞兆/仙童 | 下载 |
| FDS4435BZ | Fairchild 飞兆/仙童 | 下载 |
| FDS4897AC | Fairchild 飞兆/仙童 | 下载 |
| FDS4897C | Fairchild 飞兆/仙童 | 下载 |
| FDS4559 | Fairchild 飞兆/仙童 | 下载 |
| FDS4488 | Fairchild 飞兆/仙童 | 下载 |
| FDS4435A | Fairchild 飞兆/仙童 | 下载 |
| FDS4465 | Fairchild 飞兆/仙童 | 下载 |
| FDS4935BZ | Fairchild 飞兆/仙童 | 下载 |
| FDS4672A | Fairchild 飞兆/仙童 | 下载 |
| FDS4435BZ_F085 | Fairchild 飞兆/仙童 | 下载 |