SKB02N120ATMA1

SKB02N120ATMA1概述

Trans IGBT Chip N-CH 1.2kV 6.2A 3Pin2+Tab TO-263

Summary of Features:

.
30% lower E off compared to previous generation
.
Short circuit withstand time – 10μs
.
Designed for operation above 30kHz
.
High ruggedness, temperature stable behaviour
.
Pb-free lead plating; RoHS compliant
.
Qualified according to JEDEC for target applications

Target Applications:

offers a comprehensive IGBT portfolio for the general purpose inverters, solar inverters, UPS, induction heating, microwave oven, rice cookers,  welding and SMPS segments.

SKB02N120ATMA1数据文档
型号 品牌 下载
SKB02N120ATMA1

Infineon 英飞凌

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SKB02N60E3266ATMA1

Infineon 英飞凌

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SKB06N60HSATMA1

Infineon 英飞凌

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SKB06N60ATMA1

Infineon 英飞凌

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SKB04N60ATMA1

Infineon 英飞凌

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SKB02N60ATMA1

Infineon 英飞凌

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SKB02N60

Infineon 英飞凌

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SKB02N120

Infineon 英飞凌

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SKB04N60

Infineon 英飞凌

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SKB06N60

Infineon 英飞凌

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SKB06N60HS

Infineon 英飞凌

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