BR93H66RFVT-2CE2

BR93H66RFVT-2CE2概述

ROHM  BR93H66RFVT-2CE2  EEPROM, AEC-Q100, 4 Kbit, 256 x 16位, 1.25 MHz, 3线, TSSOP, 8 引脚 新

The is a Microwire bus serial EEPROM in 8 pin TSSOP package. This 3-wire EEPROM has 4Kbit 256 x 16bit memory size. The device can withstand electrostatic voltage up to 6KV HBM method. It has same package line-up and same pin configuration. The BR93H66RFVT-2CE2 provides high reliability using ROHM original double cell structure. Communications of Microwire bus are carried out by SK serial clock, DI serial data input, DO serial data output and CS chip select for device selection. It also has prevention of write mistake feature write prohibition at power on, write prohibition by command code, write mistake prevention circuit at low voltage. The device has low supply current of 0.8mA write operation 5V, 0.5mA read operation 5V and 0.1µA standby operation 5V.

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Automotive grade AEC-Q100 qualified
.
Single supply voltage operation range from 2.5V to 5.5V
.
Address auto increment function at READ operation
.
Serial clock frequency of 2MHz
.
Self timed programming cycle
.
Program condition display by READY/active-low BUSY
.
More than 50 years data retention Ta
.
Data set to FFFFh on all addresses at shipment
.
Wide temperature range from -40°C to +125°C

ESD sensitive device, take proper precaution while handling the device.

The residue of flux may negatively affect product performance and reliability when highly active halogenous chlorine, bromine etc flux is used.

BR93H66RFVT-2CE2数据文档
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