BFU730F,115

BFU730 系列 2.8 V 12.5 dB 增益 NPN 硅锗 射频晶体管-SOT-343F-4

The BFU730F NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

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Low noise high gain microwave transistor * Noise figure NF = 0.8 dB at 5.8 GHz * High maximum stable gain 18.5 dB at 5.8 GHz * 110 GHz fT silicon germanium technology

得捷:
RF TRANS NPN 2.8V 55GHZ 4DFP

立创商城:
BFU730F,115

e络盟:
晶体管 双极-射频, NPN, 2.8 V, 55 GHz, 197 mW, 5 mA, 205 hFE

艾睿:
Trans RF BJT NPN 2.8V 0.03A 197mW 4-Pin3+Tab DFP T/R

安富利:
Trans GP BJT NPN 2.8V 0.03A 4-Pin3+Tab DFP T/R

富昌:
BFU730 系列 2.8 V 12.5 dB 增益 NPN 硅锗 射频晶体管-SOT-343F-4

Chip1Stop:
Trans GP BJT NPN 2.8V 0.03A 4-Pin3+Tab DFP T/R

Verical:
Trans RF BJT NPN 2.8V 0.03A 197mW 4-Pin3+Tab DFP T/R

RfMW:
Transistor, Low Noise, 1.5 - 6 GHz, 20 dB, 10V, SOT343F

DeviceMart:
TRANSISTOR NPN SOT343F-4