FF1800R17IP5BPSA1

晶体管, IGBT阵列&模块, N沟道, 1.8 kA, 1.75 V, 1.7 kV, Module

Summary of Features:

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Extended Operation Temperature Tvjop= 175°C

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Output current increased by more than 25% in the same footprint

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Copper Bonds for high current carrying capabilities

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Sintering of chips for highest power cycling capabilities

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Total losses reduced by u�p to 20%

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Package with CTI > 400

Benefits:

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Increase in Power Density by up to 25%

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Up to 10 times longer lifetime

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Less cooling effort for same output p�ower

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Enables higher system overload conditions