FDS3580

PowerTrench® N 通道 MOSFET，高达 9.9A，Fairchild Semiconductor### MOSFET 晶体管，Fairchild SemiconductorFairchild 提供大量 MOSFET 设备组合，包括高电压 >250V 低电压 Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性，以减少结电容和反向恢复电荷，无需额外外部元件即可保持系统启动和运行更长时间。

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDSON

specifications. The result is a MOSFET that is easy and safer to drive even at very high frequencies, and DC/DC power supply designs with higher overall efficiency.

Features

• 7.6 A, 80 V. RDSON= 0.027 Ω @ VGS= 10 V

                  RDSON= 0.031 Ω @ VGS= 6 V.

• Low gate charge 34nC typical.

• Fast switching speed.

• High performance trench technology for extremely low RDSON.

• High power and current handling capability.