FAIRCHILD SEMICONDUCTOR FQD19N10LTM 晶体管, MOSFET, N沟道, 15.6 A, 100 V, 0.074 ohm, 10 V, 2 V
The is a QFET® N-channel enhancement-mode Power MOSFET produced using Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.
| 型号 | 品牌 | 下载 |
|---|---|---|
| FQD19N10LTM | Fairchild 飞兆/仙童 | 下载 |
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