600V,30A,沟槽栅场截止型IGBT
This IGBT transistor from STMicroelectronics is perfect if your circuit contains high currents passing through it. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 150000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
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|---|---|---|
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