FAIRCHILD SEMICONDUCTOR FDN8601 晶体管, MOSFET, N沟道, 2.7 A, 100 V, 0.0854 ohm, 10 V, 3 V
The is a N-channel MOSFET produced using Semiconductor"s advanced PowerTrench® process. It is suitable for primary DC-to-DC switch and load switch applications.
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High performance Trench technology for extremely low RDS ON
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High power and current handling capability in a widely used surface-mount package