EE PLD, 20ns, PAL-Type, CMOS, PQCC28, PLASTIC, LCC-28
Description
The GAL20XV10 combines a high performance CMOS process with electrically erasable E2 floating gate technology to provide the highest speed Exclusive-OR PLD available in the market. At 90mA maximum Icc 75mA typical Icc, the GAL20XV10 provides a substantial savings in power when compared to bipolar counter parts. E2CMOS technology offers high speed <100ms erase times providing the ability to reprogram, reconfigure or test the devices quickly and efficiently.
Features
• HIGH PERFORMANCE E2CMOS ® TECHNOLOGY
— 10 ns Maximum Propagation Delay
— Fmax = 100 MHz
— 7 ns Maximum from Clock Input to Data Output
— TTL Compatible 16 mA Outputs
— UltraMOS® Advanced CMOS Technology
• 50% to 75% REDUCTION IN POWER FROM BIPOLAR
— 90mA Maximum Icc
— 75mA Typical Icc
• ACTIVE PULL-UPS ON ALL PINS
• E2 CELL TECHNOLOGY
— Reconfigurable Logic
— Reprogrammable Cells
— 100% Tested/100% Yields
— High Speed Electrical Erasure <100 ms
— 20 Year Data Retention
• TEN OUTPUT LOGIC MACROCELLS
— XOR Gate Capability on all Outputs
— Full Function and Parametric Compatibility with PAL12L10, 20L10, 20X10, 20X8, 20X4
— Registered or Combinatorial with Polarity
• PRELOAD AND POWER-ON RESET OF ALL REGISTERS
• APPLICATIONS INCLUDE:
— High Speed Counters
— Graphics Processing
— Comparators
• ELECTRONIC SIGNATURE FOR IDENTIFICATION
型号 | 品牌 | 下载 |
---|---|---|
GAL20XV10B-20LJ | Lattice Semiconductor 莱迪思 | 下载 |
GAL22V10D-7LJN | Lattice Semiconductor 莱迪思 | 下载 |
GAL22V10D-10LJN | Lattice Semiconductor 莱迪思 | 下载 |
GAL20RA10B-15LJ | Lattice Semiconductor 莱迪思 | 下载 |
GAL20V8B-25LJNI | Lattice Semiconductor 莱迪思 | 下载 |
GAL20V8C-10LJI | Lattice Semiconductor 莱迪思 | 下载 |
GAL20V8B-25LPNI | Lattice Semiconductor 莱迪思 | 下载 |
GAL20V8B-25LP | Lattice Semiconductor 莱迪思 | 下载 |
GAL22V10D-25LPN | Lattice Semiconductor 莱迪思 | 下载 |
GAL20V8B-25QJNI | Lattice Semiconductor 莱迪思 | 下载 |
GAL20V8B-25QPI | Lattice Semiconductor 莱迪思 | 下载 |