STMICROELECTRONICS STPSC806G-TR 二极管, 碳化硅肖特基, SIC, 600V系列, 单, 600 V, 8 A, 10 nC, TO-263
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
ST SiC diodes will boost the performance of PFC operations in hard switching conditions.
**Key Features**
| 型号 | 品牌 | 下载 |
|---|---|---|
| STPSC806G-TR | ST Microelectronics 意法半导体 | 下载 |
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| STPS1L40A | ST Microelectronics 意法半导体 | 下载 |