NPN开关晶体管硅 NPN SWITCHING SILICON TRANSISTOR
NPN SWITCHING SILICON TRANSISTOR
Qualified per MIL-PRF-19500/251
艾睿:
Implement this versatile NPN JAN2N2218A GP BJT from Microsemi into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 800 mW. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 6 V.
Verical:
Trans GP BJT NPN 50V 0.8A 800mW 3-Pin TO-39 Bag
| 型号 | 品牌 | 下载 |
|---|---|---|
| JAN2N2218A | Microsemi 美高森美 | 下载 |
| JAN2N3019 | Microsemi 美高森美 | 下载 |
| JAN2N2329 | Microsemi 美高森美 | 下载 |
| JAN2N2222A | ON Semiconductor 安森美 | 下载 |
| JAN2N2907A | Microsemi 美高森美 | 下载 |
| JAN2N2904A | Microsemi 美高森美 | 下载 |
| JAN2N2219A | Microsemi 美高森美 | 下载 |
| JAN2N3501 | Microsemi 美高森美 | 下载 |
| JAN2N3700 | Microsemi 美高森美 | 下载 |
| JAN2N2905A | ON Semiconductor 安森美 | 下载 |
| JAN2N2906A | Microsemi 美高森美 | 下载 |