SPD04P10PLGBTMA1

INFINEON  SPD04P10PLGBTMA1  晶体管, MOSFET, P沟道, -4.2 A, -100 V, 0.55 ohm, -10 V, -1.5 V

SIPMOS® P 通道 MOSFET

**Infineon** SIPMOS® 小信号 P 通道 MOSFET 具有多种功能，可能包括增强模式、连续漏极电流（约低至 80A）及宽工作温度范围。 SIPMOS 功率可用于多种应用，包括电信、eMobility、笔记本、直流/直流设备以及汽车工业。

· 符合 AEC Q101 标准（请参阅数据表）

· 无铅引线电镀，符合 RoHS 标准

欧时:
Infineon SIPMOS 系列 Si P沟道 MOSFET SPD04P10PLGBTMA1, 4.2 A, Vds=100 V, 3引脚 DPAK TO-252封装

得捷:
MOSFET P-CH 100V 4.2A TO252-3

艾睿:
Increase the current or voltage in your circuit with this SPD04P10PLGBTMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 38000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This P channel MOSFET transistor operates in enhancement mode. This device is made with sipmos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.

TME:
Transistor: P-MOSFET; unipolar; -100V; -4.2A; 38W; PG-TO252-3

Verical:
Trans MOSFET P-CH 100V 4.2A Automotive 3-Pin2+Tab DPAK T/R

Newark:
# INFINEON  SPD04P10PLGBTMA1  MOSFET Transistor, P Channel, -4.2 A, -100 V, 0.55 ohm, -10 V, -1.5 V

Win Source:
MOSFET P-CH 100V 4.2A TO252-3