FDG8850NZ

FAIRCHILD SEMICONDUCTOR  FDG8850NZ.  场效应管, MOSFET, 双路N沟道, 30V, 250UΩ, 750mA, SC-70-6

The is a dual N-channel logic level enhancement-mode MOSFET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.

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Very small package outline

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Very low level gate drive requirements allowing direct operation in 3V circuits VGS th <1.5V

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±12V Gate to source voltage

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0.75A Continuous drain current

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2.2A Pulsed drain current