PTFC262157SHV1R250XTMA1数据手册PDF_PTFC262157SHV1R250XTMA1中文资料-锐单商城

PTFC262157SHV1R250XTMA1概述

Thermally-Enhanced High Power RF LDMOS FET, 200W, 28V, 2620 – 2690MHz Designed for Doherty, optimized for peak side

Summary of Features:

.: Broadband internal matching

.: Wide video bandwidth

.: Typical single-carrier WCDMA performance, 2690 MHz, 28 V, 10 dB PAR @ 0.01% CCDR

\- 50 W output power at P1dB

\- 29% efficiency

\- 19.5 dB gain

\- –31.5 dBc ACPR at 2690 MHz

.: Capable of handling 10:1 VSWR @ 28 V, 180 W CW output power

.: Integrated ESD protection

.: Low thermal resistance

.: Pb-free and RoHS-compliant

PTFC262157SHV1R250XTMA1详细参数

PTFC262157SHV1R250XTMA1数据文档

型号	品牌	下载
PTFC262157SHV1R250XTMA1	Infineon 英飞凌	下载
PTFC270051MV2R1KXUMA1	Infineon 英飞凌	下载
PTFC270101MV1R1KXUMA1	Infineon 英飞凌	下载
PTFC210202FCV1XWSA1	Infineon 英飞凌	下载
PTFC210202FCV1R250XTMA1	Infineon 英飞凌	下载
PTFC260202FCV1R250XTMA1	Infineon 英飞凌	下载
PTFC260202FCV1XWSA1	Infineon 英飞凌	下载
PTFC260362SCV1R250XTMA1	Infineon 英飞凌	下载
PTFC261402FCV1R250XTMA1	Infineon 英飞凌	下载
PTFC261402FCV1XWSA1	Infineon 英飞凌	下载
PTFC262157FHV1R250XTMA1	Infineon 英飞凌	下载