晶体管 双极-射频, NPN, 2 V, 90 GHz, 300 mW, 15 mA, 1200 hFE
Designed with semiconductor technology, this RF amplifier from Semiconductors easily operates at high RF frequencies. This product"s minimum DC current gain is 655. It has a maximum collector emitter saturation voltage of 1 V. This RF transistor has a minimum operating temperature of -40 °C and a maximum of 85 °C.