BSS308PEH6327XTSA1

INFINEON  BSS308PEH6327XTSA1  晶体管, MOSFET, P沟道, -2 A, -30 V, 0.062 ohm, -10 V, -1.5 V

OptiMOS™P P 通道功率 MOSFET

**Infineon** **OptiMOS**™ P 通道电源 MOSFET 设计用于提供增强功能，以便达到质量指标。 特征包括超低切换损耗、通态电阻、雪崩额定值以及达到汽车解决方案的 AEC 标准。 应用包括：直流-直流、电动机控制、汽车和 eMobility。

增强型模式

雪崩等级

低切换和传导功率损耗

无铅引线电镀；符合 RoHS 标准

标准封装

OptiMOS™ P 通道系列：温度范围为 -55°C 至 +175°C

立创商城:
BSS308PEH6327XTSA1

得捷:
MOSFET P-CH 30V 2A SOT23-3

欧时:
Infineon OptiMOS P 系列 Si P沟道 MOSFET BSS308PEH6327XTSA1, 1.6 A, Vds=30 V, 3引脚 SOT-23封装

e络盟:
功率场效应管, MOSFET, P沟道, 30 V, 2 A, 0.062 ohm, SOT-23, 表面安装

艾睿:
In addition to amplifying electronic signals, you&s;ll be able to switch between various lines with the BSS308PEH6327XTSA1 power MOSFET, developed by Infineon Technologies. Its maximum power dissipation is 500 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This P channel MOSFET transistor operates in enhancement mode. This device is made with optimos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

安富利:
Trans MOSFET P-CH 30V 2A 3-Pin SOT-23 T/R

Chip1Stop:
Trans MOSFET P-CH 30V 2A 3-Pin SOT-23 T/R

TME:
Transistor: P-MOSFET; unipolar; -30V; -2A; 0.5W; PG-SOT23

Verical:
Trans MOSFET P-CH 30V 2A Automotive 3-Pin SOT-23 T/R

Newark:
MOSFET Transistor, P Channel, -2 A, -30 V, 0.062 ohm, -10 V, -1.5 V

Win Source:
MOSFET P-CH 30V 2A SOT23