PD57018-E系列 65 V 18 W N沟道 增强模式 横向MOSFET - PowerSO
Use this specially engineered RF amplifier from STMicroelectronics as a switching device in your electronic circuit design. Its maximum power dissipation is 31700 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel RF power MOSFET operates in enhancement mode. Its maximum frequency is 1000 MHz. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 165 °C.
| 型号 | 品牌 | 下载 |
|---|---|---|
| PD57018-E | ST Microelectronics 意法半导体 | 下载 |
| PD57002-E | ST Microelectronics 意法半导体 | 下载 |
| PD57006STR-E | ST Microelectronics 意法半导体 | 下载 |
| PD57006S-E | ST Microelectronics 意法半导体 | 下载 |
| PD57006-E | ST Microelectronics 意法半导体 | 下载 |
| PD57030-E | ST Microelectronics 意法半导体 | 下载 |
| PD57060-E | ST Microelectronics 意法半导体 | 下载 |
| PD57070-E | ST Microelectronics 意法半导体 | 下载 |
| PD57060S-E | ST Microelectronics 意法半导体 | 下载 |
| PD57045TR-E | ST Microelectronics 意法半导体 | 下载 |
| PD57018STR-E | ST Microelectronics 意法半导体 | 下载 |