MMST5551-7-F

MMST5551-7-F概述

Trans GP BJT NPN 160V 0.2A 200mW Automotive 3Pin SOT-323 T/R

- 双极 BJT - 单 NPN 300MHz 表面贴装型 SOT-323


得捷:
TRANS NPN 160V 0.2A SOT323


立创商城:
NPN 160V 200mA


艾睿:
Add switching and amplifying capabilities to your electronic circuit with this NPN MMST5551-7-F GP BJT from Diodes Zetex. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 200 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 160 V and a maximum emitter base voltage of 6 V.


Allied Electronics:
Transistor NPN 160V 0.2A SOT323


安富利:
Trans GP BJT NPN 160V 0.2A 3-Pin SOT-323 T/R


Chip1Stop:
Trans GP BJT NPN 160V 0.2A 3-Pin SOT-323 T/R


Verical:
Trans GP BJT NPN 160V 0.2A 200mW Automotive 3-Pin SOT-323 T/R


儒卓力:
**NPN TRANS 160V 0,2A SOT323 **


Win Source:
TRANS NPN 160V 0.2A SC70-3


DeviceMart:
TRANSISTOR NPN 160V SC70-3


MMST5551-7-F数据文档
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