IPB200N25N3GATMA1

INFINEON  IPB200N25N3GATMA1  晶体管, MOSFET, N沟道, 64 A, 250 V, 0.0175 ohm, 10 V, 3 V

OptiMOS™3 功率 MOSFET，100V 及以上

欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET IPB200N25N3GATMA1, 64 A, Vds=250 V, 3引脚 D2PAK TO-263封装

得捷:
MOSFET N-CH 250V 64A D2PAK

立创商城:
N沟道 250V 64A

贸泽:
MOSFET N-Ch 250V 64A D2PAK-2 OptiMOS 3

艾睿:
This IPB200N25N3GATMA1 power MOSFET from Infineon Technologies can be used for amplification in your circuit. Its maximum power dissipation is 300000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with optimos technology. This N channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET N-CH 250V 64A 3-Pin TO-263 T/R

TME:
Transistor: N-MOSFET; unipolar; 250V; 64A; 300W; PG-TO263-3

Verical:
Trans MOSFET N-CH 250V 64A 3-Pin2+Tab D2PAK T/R

Newark:
MOSFET Transistor, N Channel, 64 A, 250 V, 0.0175 ohm, 10 V, 3 V

力源芯城:
250V,64A,N沟道功率MOSFET