K6R4016V1C-TC10和K6R4016V1D-TC10

对比图 P4CE10F17C6N中文资料P4CE10F17C6N中文资料P4CE10F17C6N中文资料

型号 K6R4016V1C-TC10 K6R4016V1D-TC10 K6R4016V1D-TI10

描述 Standard SRAM, 256KX16, 10ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44K6R4016V1D 256K x 16Bit High Speed Static RAM(3.3V Operating). Organization = 256K x 16 Vcc(V) = 3.3 Speed-tAA(ns) = 8,10 Operating Temperature = C,i Operating Current(mA) = 80,65 Standby Current(mA) = 5 Package = 44SOJ,44TSOP2,48TBGAStandard SRAM, 256KX16, 10ns, CMOS, PDSO44, TSOP2-44

数据手册 ---

制造商 Samsung (三星) Samsung (三星) Samsung (三星)

分类 RAM芯片

基础参数对比

安装方式 Surface Mount Surface Mount Surface Mount

封装 TSOP TSOP TSOP

封装 TSOP TSOP TSOP

产品生命周期 Obsolete Obsolete Obsolete

电源电压 - 3.3 V -

RoHS标准 RoHS Compliant -

 锐单商城 - 一站式电子元器件采购平台  

 深圳锐单电子有限公司