对比图
型号 FLM1011-6F FLM1011-8F FLM1011-3F
描述 High Power GaAs FETs, X-Band, 7.5dB, 10.7 11.7GHz, 1650mARF Power Field-Effect Transistor, 1Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2PinRF Power Field-Effect Transistor, 1Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IA, 2Pin
数据手册 ---
制造商 Sumitomo (住友) Sumitomo (住友) Sumitomo (住友)
分类
封装 CASE IA CASE IB CASE IA
频率 10.7GHz ~ 11.7GHz 10.7GHz ~ 11.7GHz 10.7GHz ~ 11.7GHz
封装 CASE IA CASE IB CASE IA
产品生命周期 Unknown Active Active
RoHS标准 RoHS Compliant RoHS Compliant RoHS Compliant
含铅标准 - Lead Free Lead Free
香港进出口证 - NLR NLR