IDT70T633S12BFI和IDT70V7339S133BFI

对比图 P4CE10F17C6N中文资料P4CE10F17C6N中文资料P4CE10F17C6N中文资料

型号 IDT70T633S12BFI IDT70V7339S133BFI IDT70T3339S133BFI

描述 HIGH -SPEED 2.5V 512 / 256K ×18异步双口静态RAM为3.3V 0R 2.5V接口 HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACEHIGH -SPEED 3.3V 512K ×18同步BANK切换的双端口静态3.3V或2.5V接口RAM HIGH-SPEED 3.3V 512K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACEHIGH -SPEED 2.5V二百五十六分之五百一十二/ 128K ×18同步双端口静态3.3V或2.5V接口RAM HIGH-SPEED 2.5V 512/256/128K X 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

数据手册 ---

制造商 Integrated Device Technology (艾迪悌) Integrated Device Technology (艾迪悌) Integrated Device Technology (艾迪悌)

分类 存储芯片存储芯片存储芯片

基础参数对比

封装 LFBGA LFBGA LFBGA

封装 LFBGA LFBGA LFBGA

产品生命周期 Unknown Unknown Unknown

包装方式 Tray Tray Tray

RoHS标准 Non-Compliant - RoHS Compliant

含铅标准 Contains Lead - Lead Free

ECCN代码 - 3A991 3A991

锐单商城 - 一站式电子元器件采购平台