对比图
型号 2N3997 JAN2N3997 JANTXV2N3997
描述 Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 4 PinNPN电源开关硅晶体管 NPN POWER SWITCHING SILICON TRANSISTORPower Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1Element, NPN, Silicon, Metal, 4Pin, TO-111/I, 4Pin
数据手册 ---
制造商 API Technologies Microsemi (美高森美) Solitron Devices
分类 双极性晶体管
封装 - TO-111-4 TO-111
击穿电压(集电极-发射极) - 80 V -
最小电流放大倍数(hFE) - 80 @1A, 2V -
额定功率(Max) - 2 W -
封装 - TO-111-4 TO-111
工作温度 - -65℃ ~ 200℃ (TJ) -
产品生命周期 Obsolete Active Active
包装方式 - Bulk -
RoHS标准 - Non-Compliant
含铅标准 - Contains Lead