对比图
描述 HIGH SPPED, HIGH CURRENT SWITCHING APPLICATION. DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS.N - 沟道增强型功率MOS晶体管 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORSTrans MOSFET N-CH Si 900V 5A 3Pin(3+Tab) TO-3PN
数据手册 ---
制造商 Toshiba (东芝) ST Microelectronics (意法半导体) Toshiba (东芝)
分类 MOS管MOS管
安装方式 - Through Hole Through Hole
封装 - TO-247 2-16C1B
额定电压(DC) - - 900 V
额定电流 - - 5.00 A
漏源极电压(Vds) - 900 V 900 V
连续漏极电流(Ids) - 5.3A 5.00 A
上升时间 - - 40.0 ns
极性 - N-CH -
封装 - TO-247 2-16C1B
产品生命周期 Obsolete Unknown Unknown
包装方式 - - Bulk
RoHS标准 RoHS Compliant Non-Compliant Non-Compliant
含铅标准 - - Contains Lead