对比图
型号 IXTU12N06T IXTY12N06T STD12NF06-1
描述 TO-251 N-CH 60V 12ADPAK N-CH 60V 12AN沟道60V - 0.08ヘ - 12A - DPAK - IPAK STripFET⑩ II功率MOSFET N-channel 60V - 0.08ヘ - 12A - DPAK - IPAK STripFET⑩ II Power MOSFET
数据手册 ---
制造商 IXYS Semiconductor IXYS Semiconductor ST Microelectronics (意法半导体)
分类 MOS管MOS管MOS管
安装方式 Through Hole Surface Mount Through Hole
封装 TO-251-3 TO-252-3 TO-251-3
极性 N-CH N-CH N-Channel
耗散功率 33W (Tc) 33W (Tc) 30W (Tc)
漏源极电压(Vds) 60 V 60 V 60 V
连续漏极电流(Ids) 12A 12A 12.0 A
输入电容(Ciss) 256pF @25V(Vds) 256pF @25V(Vds) 315pF @25V(Vds)
耗散功率(Max) 33W (Tc) 33W (Tc) 30W (Tc)
额定电压(DC) - - 60.0 V
额定电流 - - 12.0 A
漏源极电阻 - - 100 mΩ
漏源击穿电压 - - 60.0 V
栅源击穿电压 - - ±20.0 V
封装 TO-251-3 TO-252-3 TO-251-3
工作温度 -55℃ ~ 175℃ (TJ) -55℃ ~ 175℃ (TJ) -55℃ ~ 175℃ (TJ)
产品生命周期 Active Obsolete Obsolete
包装方式 Tube Tube Tube
RoHS标准 RoHS Compliant RoHS Compliant RoHS Compliant
含铅标准 Lead Free Lead Free Lead Free