IDT70T651S10BCI和IDT70V7519S133BC

对比图 P4CE10F17C6N中文资料P4CE10F17C6N中文资料P4CE10F17C6N中文资料

型号 IDT70T651S10BCI IDT70V7519S133BC IDT70T651S12BC

描述 HIGH -SPEED 2.5V 256 / 128K ×36异步双口静态RAM为3.3V 0R 2.5V接口 HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACEHIGH -SPEED 3.3V 256K ×36同步BANK切换的双端口静态3.3V或2.5V接口RAM HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACEHIGH -SPEED 2.5V 256 / 128K ×36异步双口静态RAM为3.3V 0R 2.5V接口 HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE

数据手册 ---

制造商 Integrated Device Technology (艾迪悌) Integrated Device Technology (艾迪悌) Integrated Device Technology (艾迪悌)

分类 存储芯片存储芯片存储芯片

基础参数对比

安装方式 Surface Mount Surface Mount Surface Mount

封装 BGA-256 BGA-256 BGA-256

封装 BGA-256 BGA-256 BGA-256

产品生命周期 Unknown Unknown Unknown

包装方式 Tray Tray Tray

RoHS标准 Non-Compliant Non-Compliant Non-Compliant

含铅标准 Contains Lead Contains Lead Contains Lead

ECCN代码 3A991 3A991 3A991

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