对比图
型号 FS30KMJ-3 IRFP240R 2SK3209
描述 高速开关用N沟道功率MOS FET High-Speed Switching Use Nch Power MOS FETPower Field-Effect Transistor, 20A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247硅N沟道MOS FET高速电源开关 Silicon N Channel MOS FET High Speed Power Switching
数据手册 ---
制造商 Renesas Electronics (瑞萨电子) Harris Renesas Electronics (瑞萨电子)
分类
封装 TO-220 - TO-220
封装 TO-220 - TO-220
产品生命周期 Unknown Obsolete Not Recommended
极性 - - N-CH
漏源极电压(Vds) - - 150 V
连续漏极电流(Ids) - - 25A
RoHS标准 - RoHS Compliant -
含铅标准 - Lead Free -