对比图
型号 BLW98 TVU002 2N3375
描述 RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPNRF Power Bipolar Transistor, 1Element, Ultra High Frequency Band, Silicon, NPN射频与微波晶体管VHF- UHF C类WIDE BAND RF & MICROWAVE TRANSISTORS VHF-UHF CLASS C WIDE BAND
数据手册 ---
制造商 Advanced Semiconductor Advanced Semiconductor Microsemi (美高森美)
分类
封装 SOT-122 - -
耗散功率 21.5 W - -
最小电流放大倍数(hFE) 15 - -
工作温度(Max) 200 ℃ - -
工作温度(Min) 65 ℃ - -
封装 SOT-122 - -
产品生命周期 Active Active Active
包装方式 Tray - -
RoHS标准 RoHS Compliant - Non-Compliant