对比图
型号 FQB2N90TM IRFBF20SPBF IRFBF20S
描述 Trans MOSFET N-CH 900V 2.2A 3Pin(2+Tab) D2PAK T/RPower Field-Effect Transistor, 1.7A I(D), 900V, 8Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3Power Field-Effect Transistor, 1.7A I(D), 900V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3
数据手册 ---
制造商 Fairchild (飞兆/仙童) Vishay Intertechnology Vishay Intertechnology
分类 MOS管
安装方式 Surface Mount - -
封装 TO-263-3 - -
额定电压(DC) 900 V - -
额定电流 2.20 A - -
漏源极电阻 7.20 Ω - -
极性 N-Channel - -
耗散功率 3.13W (Ta), 85W (Tc) - -
漏源极电压(Vds) 900 V - -
漏源击穿电压 900 V - -
栅源击穿电压 ±30.0 V - -
连续漏极电流(Ids) 2.20 A - -
输入电容(Ciss) 500pF @25V(Vds) - -
额定功率(Max) 3.13 W - -
耗散功率(Max) 3.13W (Ta), 85W (Tc) - -
封装 TO-263-3 - -
工作温度 -55℃ ~ 150℃ (TJ) - -
产品生命周期 Unknown Active Obsolete
包装方式 Tape - -
RoHS标准 RoHS Compliant RoHS Compliant -
含铅标准 Lead Free Lead Free -
ECCN代码 EAR99 - -