FLM1414-3F和FLM1414-4F

对比图 P4CE10F17C6N中文资料P4CE10F17C6N中文资料P4CE10F17C6N中文资料

型号 FLM1414-3F FLM1414-4F FLM1414-8C

描述 RF Power Field-Effect Transistor, 1Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IA, 2PinRF Power Field-Effect Transistor, 1Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IA, 2PinRF Power Field-Effect Transistor, 1Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2

数据手册 ---

制造商 Sumitomo (住友) Sumitomo (住友) Fujitsu (富士通)

分类

基础参数对比

封装 CASE IA CASE IA -

频率 14GHz ~ 14.5GHz 14GHz ~ 14.5GHz -

封装 CASE IA CASE IA -

产品生命周期 Active Active Active

RoHS标准 RoHS Compliant RoHS Compliant -

含铅标准 Lead Free Lead Free -

香港进出口证 - NLR -

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