JAN2N2857和MMBT918

对比图

型号 JAN2N2857 MMBT918 2N2857

描述 RF Small Signal Bipolar Transistor, 0.04A I(C), 1Element, Ultra High Frequency Band, Silicon, NPN, TO-72, HERMETIC SEALED, METAL CAN-4t-Npn Si- VhfRF Small Signal Bipolar Transistor, 0.04A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-72, METAL, TO-72, 4 PIN

数据手册 ---

制造商 Microsemi (美高森美) NTE Electronics

分类 双极性晶体管分立器件

安装方式 Through Hole - -

引脚数 4 - -

封装 TO-72-3 - -

击穿电压(集电极-发射极) 15 V - -

最小电流放大倍数(hFE) 30 @3mA, 1V - -

额定功率(Max) 200 mW - -

封装 TO-72-3 - -

工作温度 -65℃ ~ 200℃ (TJ) - -

产品生命周期 Active Active Active

包装方式 Bulk - -

RoHS标准 Non-Compliant Non-Compliant RoHS Compliant

含铅标准 Contains Lead - -

ECCN代码 EAR99 - -