IRFR210PBF和IRFR210TRL

对比图 P4CE10F17C6N中文资料P4CE10F17C6N中文资料P4CE10F17C6N中文资料

型号 IRFR210PBF IRFR210TRL IRFR210TRLPBF

描述 Power Field-Effect Transistor, 2.6A I(D), 200V, 1.5Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3MOSFET N-CH 200V 2.6A DPAKPower Field-Effect Transistor, 2.6A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3

数据手册 ---

制造商 Vishay Intertechnology Vishay Siliconix International Rectifier (国际整流器)

分类 MOS管MOS管

基础参数对比

封装 TO-252 TO-252-3 TO-252

安装方式 - Surface Mount -

封装 TO-252 TO-252-3 TO-252

产品生命周期 Active Obsolete Unknown

RoHS标准 RoHS Compliant Non-Compliant RoHS Compliant

含铅标准 Lead Free Contains Lead -

耗散功率 - 2.5W (Ta), 25W (Tc) -

漏源极电压(Vds) - 200 V -

输入电容(Ciss) - 140pF @25V(Vds) -

耗散功率(Max) - 2.5W (Ta), 25W (Tc) -

极性 - - N-Channel

工作温度 - -55℃ ~ 150℃ (TJ) -

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