对比图
描述 典型的共源极S - 参数 Typical Common Source S - ParametersRF Small Signal Field-Effect Transistor, 1Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC, CASE LG, SMT, 4PinNECs C TO X BAND N-CHANNEL GaAs MES FET
数据手册 ---
制造商 Infineon (英飞凌) Sumitomo (住友) NEC (日本电气)
分类
封装 - CASE LG -
频率 - 4 GHz -
封装 - CASE LG -
产品生命周期 Unknown Active Obsolete
RoHS标准 RoHS Compliant RoHS Compliant -
含铅标准 - Lead Free -